NTMD6601NR2G

Manufacturer Part	NTMD6601NR2G
Manufacturer	onsemi
Description	MOSFET 2N-CH 80V 1.1A 8SOIC
Category	Discrete Semiconductor Products
RoHS	Lead free / RoHS Compliant
Warranty	365 days
Datasheet	-

Type	Description
Product Status:	Obsolete
FET Type:	2 N-Channel (Dual)
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	80V
Current - Continuous Drain (Id) @ 25°C:	1.1A
Rds On (Max) @ Id, Vgs:	215mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id:	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:	400pF @ 25V
Power - Max:	600mW
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SOIC

We provide 90 days warranty;
The Pre-Shipment Inspection (PSI) will be applied;
If some of the items you received aren't of perfect quality, we would responsibly arrange your refund or replacement. But the items must remain their original condition;
If you don't receive the item in 25 days, just let us know, a new package or replacement will be issued.
If your item is significantly different from our product description, you can A: Return it and get a full refund, or B: Get a partial refund and keep the item.
Taxes & VAT will not be included;